PART |
Description |
Maker |
1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin Diode Switching 50V 3A 2-Pin Case A GOLD BOUNDED GERMANUM DIODE Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R Diode Switching 125V 0.0003A 2-Pin DO-35 Diode Switching 50V 0.005A 2-Pin Case H GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
1N4392 1N4404 1N4411 1N4421 1N4402 1N4405 1N4403 1 |
DIODE SWITCHING DIODE 0.5A 2DO-17 Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R Diode Zener Single 68V 5% 1.5W 2-Pin DO-41 Diode Rectifier Bridge Single 200V 10A
|
New Jersey Semiconductor
|
BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching Latest Silicon Discretes - Switching Diode for high speed switching Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
MMBD7000LT1 ON2085 |
Dual Switching Diode DUAI SWITCHING DIODE From old datasheet system
|
MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
|
CPD91V |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
CPD80V10 |
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
IKB15N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
CMPD7000E |
SMD Switching Diode Dual: In Series ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODE SERIES CONNECTION
|
Central Semiconductor Corp
|
CMKD2836 CMKD2838 |
SMD Switching Diode Dual Pair: Common Cathode SMD Switching Diode Dual Pair: Common Anode SURFACE MOUNT ULTRAmini DUAL PAIR HIGH SPEED SWITCHING SILICON DIODES
|
Central Semiconductor Corp
|
70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5 Diode Switching 1KV 70A 2-Pin DO-5 Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|